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MgAl2O4 Spinel Crystal Substrates / Transparent Spinel ±0.05 Mm Thickness

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MgAl2O4 Spinel Crystal Substrates / Transparent Spinel ±0.05 Mm Thickness

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Place of Origin : China

Brand Name : CRYLINK

Certification : Iso9001

MOQ : 1 Pieces

Price : negotiation

Packaging Details : Carton

Delivery Time : 3-4 weeks

Payment Terms : TT

Supply Ability : 100 pieces /month

Model Number : CRYLINK-MgAl2O4 Spinel Crystal

Name : MgAl2O4 Crystal Substrates

Orientation : [100] or [100] or[111] < ±0.5°

Chamfer : <0.1×45°

Thickness/DiameterTolerance : ±0.05 mm

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Description

Magnesium Aluminate (MgAl2O4 or spinel) single crystalsare widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. MgAl2O4 is an attractive material for uses in a wide range of optical, electronic and structural applications including windows and lenses, which require excellent transmission from the visible through to the mid IR.

Theoretical transmission is very uniform and approaches 87% between 0.3 to 5 microns. Transmission characteristics rival that of ALON and sapphire in the mid-wave IR, making it especially attractive for the ever-increasing performance requirements of current and next-generation IR imaging systems.

It is also found that MgAl2O4 is a good substrate for III-V nitrides device. Spinel (MgAl2O4) is one candidate for such GaN LDs substrate. The crystallographic structure of MgAl2O4 is a spinel type (Fd3m), and its lattice constant is 8.083 A. MgAl2O4 is a relatively low-cost substrate material, which has been successfully applied to the growth of high quality GaN films.

MgAl2O4 is cleaved on the (100) plane. GaN LD cavities have been obtained by simply cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure.


Features

  • good optical, chemical and thermal properties
  • good high temperature properties
  • stable physical performance

Applications

  • MgAl2O4 substrate

Main Specification

Materials

MgAl2O4

Orientation

[100] or [100] or[111] < ±0.5°

Parallel

10

Perpendicular

5

surface Quality

10/5

Wavefront Distortion

/4@632nm

Surface Flatness

/8@632nm

Clear Aperture

>95%

Chamfer

<0.1×45°

Thickness/DiameterTolerance

±0.05 mm

Maximum dimensions

dia 50×100mm

Coatings

AR/AR@940+1030HR@1030+HT@940+AR1030


Material characteristics

Physical and chemicalcharacteristics

Chemicalformula

MgAl2O4

Crystalstructure

cubicm3m

Latticeparameters,

a= 8.083

MeltingPoint(℃)

2130°C

Density,g/cm3

3.61g/cm3

TransmissionRange

0.215.3 m

Refractiveindex

1.8245@0.8 m,

Mohshardness

8

Thermalconductivity at 25°C, W x cm-1 x °K-1

14.0W/(mK)

Thermalexpansion coefficient

7.45×10-6/K

PhaseVelocity

6500 m/s at (100) shear wave

Propagationloss

6.5dB/ms

SpecificHeat

0.59W.s/g/K



Product Tags:

gallium gadolinium garnet

      

zno wafer

      
China MgAl2O4 Spinel Crystal Substrates / Transparent Spinel ±0.05 Mm Thickness wholesale

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