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Zinc Oxide Substrate Crystals / ZnO Wafer Crystal Substrates High Crystallinity

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Zinc Oxide Substrate Crystals / ZnO Wafer Crystal Substrates High Crystallinity

Place of Origin : China

Brand Name : CRYLINK

Certification : Iso9001

MOQ : 1 Pieces

Price : negotiation

Packaging Details : Carton

Delivery Time : 3-4 weeks

Payment Terms : TT

Supply Ability : 100 pieces /month

Model Number : CRYLINK-ZnO Crystal

Name : (ZnO) single crystals

Clear Aperture : >95%

Chamfer : <0.1×45°

Thickness/Diameter Tolerance : ±0.05 mm

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Description

Zinc oxide (ZnO) single crystals were grown by the hydrothermal method using a platinum inner container. The 2 inch ZnO wafers obtained from these bulk crystals possess an extremely high crystallinity and purity. The electrical resistivity is highly uniform over the entire wafer area. After annealing, the step-and-terrace structure was observed on the surface of the wafer. The etch pit density was decreased to less than 80 cm-2. These results suggest that these 2 inch ZnO wafers are suitable for wide band gap device applications. The bandgap is in the 3.4 eVrange which makes it attractive for many of the blue and violet applications in opto-electronics as well as UV devices.


Features

Excellent crystalline quality

Excellent lattice match to nitride

Easily etched for device integration


Applications

Semiconductor circuit substrate

ZnO LED

ZnO film


Main Specification

Materials

ZnO

Orientation

[0 0 0 -1] or [1 0 -1 0] < ±0.5°

Parallel

10

Perpendicular

5

surface Quality

10/5

Wavefront Distortion

/4 @632nm

Surface Flatness

/8 @632nm

Clear Aperture

>95%

Chamfer

<0.1×45°

Thickness/Diameter Tolerance

±0.05 mm

Maximum dimensions

dia 50×100mm

Coatings

AR/AR@940+1030HR@1030+HT@940+AR1030

Material characteristics

Physical and chemicalcharacteristics

Type of Material

single crystal

Crystal Structure

hexagonal, a = b=3.252 , c = 5.313

Molecular Weight

81.47

Refractive Index

no = 1.3836, ne = 1.3957 @0.405 m

Reflective Loss

5,1% @4,0 m; 11,2% @0.12 m

Density

5.7 g/cm3

Melting Point

1975°C

Thermal Conductivity

6 W/(mK)

Thermal Expansion

a: 6.510-6 /°C; C:3.710-6 / °C @20°C

Hardness (Mohs)

4

Dielectric Constant

C: 4.87; ⊥C: 5.45 @95 KHz -42 MHz

Solubility in Water

no

Standard product

Orientation

End configuration, nm

Thickness, nm

Optical transmission

[0 0 0 -1]

5×5

0.5

no = 1.3836,
ne = 1.3957

@0.405 m

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

8×8

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

10×10

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

15×15

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

dia 25.4

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]


Product Tags:

gallium gadolinium garnet

      

zno wafer

      
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